Study of TID effects on one row hammering using gamma in DDR4 SDRAMs

摘要

This paper investigates the Total Ionizing Dose (TID) effect on DDR4 SDRAM, using^{60Co γ-rays. Although retention time degraded with 830 Gy(Si) exposure, no retention errors were observed at the retention time of 64-ms and temperature of 80 °C. Unlike retention time degradation, the significant degradation in one-row hammering threshold was observed. The threshold was reduced by up to 113 k with tRP 53.75 ns-67% reduction from pre-irradiation values.}