A Surface-Mountable 1.2 cc Compact Molded Package Suitable for 13 kV SiC MOSFET

摘要

A surface-mountable 1.2 cc compact package suitable for 13 kV SiC MOSFET was successfully developed for pulsed power applications. To get a compact high-voltage-durable package, the authors applied the transfer molding technologies. The two factors were essential. One is to enlarge creepage distance by contriving three mechanical changes. The other is to add chamfers on the terminal edges inside to reduce intensity of an electric field. The new package volume is roughly two orders smaller than the previous studies'. The package healthily operated up to 18.4 kV peak without discharge, and verified its performance with 13 kV SiC MOSFET.