Effect of ZnO Buffer Layer on Phase Transition Properties of Vanadium Dioxide Thin Films

摘要

VO_2 thin films were prepared on ZnO buffer layers by DC magnetron sputtering at room temperature using vanadium target and post annealing at 400 °C. The ZnO buffer layers with different thickness deposited on glass substrates by magnetron sputtering have a high visible and near infrared optical transmittance. The electrical resistivity and the phase transition properties of the VO_2/ZnO composite thin films in terms of temperature were investigated. The results showed that the resistivity variation of VO_2 thin film with ZnO buffer layer deposited for 35 min was 16 KΩ-cm. The VO_2/ZnO composite thin films exhibit a reversible semiconductor-metal phase transition at 48 °C.