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Simulation and analysis of RF MEMS cantilever switch for low actuation voltage

机译:低激励电压下RF MEMS悬臂开关的仿真与分析

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Nowadays, Radio Frequency (RF) Microelectromechanical system (MEMS) switches are getting more popular in the electronics field. Since consumption of power has become the highest concern in many electronics devices. The main problem for using RF MEMS switches is its high actuation voltage. Thus this paper generally concentrate on the analysis and simulation of RF MEMS metal contact switch having a n-shaped cantilever beam to obtain the low actuation voltage. Simulations are done using the finite element modelling. Intellisuite 8.7v software have been used to get the results of the switch. The design has been revised in terms of thickness of the beam and air gap to carry out electrostatic actuation mechanism. The pull-in voltage is obtained to be 2.6 V.
机译:如今,射频(RF)微机电系统(MEMS)开关在电子领域变得越来越流行。由于功耗已成为许多电子设备中最关注的问题。使用RF MEMS开关的主要问题是其高驱动电压。因此,本文通常集中在具有n形悬臂梁的RF MEMS金属接触开关的分析和仿真上,以获得较低的驱动电压。使用有限元建模进行仿真。 Intellisuite 8.7v软件已用于获取切换结果。该设计在梁的厚度和气隙方面进行了修改,以执行静电致动机制。获得的吸合电压为2.6V。

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