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机译:分析和优化两个可动板RF MEMS开关,以同时改善驱动电压和切换时间
IC Design and Fabrication Centre, Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata 700032, India;
IC Design and Fabrication Centre, Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata 700032, India;
IC Design and Fabrication Centre, Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata 700032, India;
IC Design and Fabrication Centre, Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata 700032, India;
Advanced Technology Development Center, Sponsored Research and Industrial Consultancy, I.I.T. Kharagpur 721302, India;
IC Design and Fabrication Centre, Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata 700032, India;
switching speed; actuation voltage; RF MEMS switch; two movable plates; equivalent model;
机译:具有70亿个周期冷切换寿命的低驱动电压RF MEMS并联开关
机译:具有两个活动板的RF MEMS开关的性能改进
机译:直流动态偏置可在严重欠阻尼的边缘场静电MEMS执行器中将开关时间缩短50倍以上
机译:使用漏极电压保持电容器改善MEMS DC开关的热开关寿命
机译:用于射频应用的低激励电压K波段MEMS开关的设计和制造。
机译:可向低压和快速响应的RF-MEMS开关横向移动的三电极驱动器
机译:用于切换严重欠压流场静电MEMS执行器的时间改进的实时DC动态偏置方法