首页> 外文会议>IEEE Radiation Effects Data Workshop >Total Ionizing Dose Effects in Commercial Floating-Gate-Alternative Non-Volatile Memories

【24h】

Total Ionizing Dose Effects in Commercial Floating-Gate-Alternative Non-Volatile Memories

机译：商业浮栅替代非易失性存储器中的总电离剂量效应

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

The total dose response of commercially-available floating-gate-alternative non-volatile memories is characterized. The response of MRAM, FRAM, CBRAM, ReRAM, SONOS, and PCRAM devices are compared to a relatively radiation tolerant NAND flash.

机译：表征了市售的浮栅替代非易失性存储器的总剂量响应。将MRAM，FRAM，CBRAM，ReRAM，SONOS和PCRAM设备的响应与相对耐辐射的NAND闪存进行了比较。

著录项

来源
《IEEE Radiation Effects Data Workshop》|2017年|1-5|共5页
会议地点
作者
Matthew J. Gadlage; Matthew J. Kay; David I. Bruce; Austin H. Roach; Adam R. Duncan; Aaron M. Williams; J. David Ingalls;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词
Hafnium; CMOS technology; Indexes; Total ionizing dose;

机译：;; CMOS技术;指标;总电离剂量;
入库时间 2022-08-26 15:24:53

相似文献

外文文献
中文文献
专利

1. Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices [J] . Xi K., Bi J. S., Xu Y. N., Microelectronics & Reliability . 2020,第Nova期

机译：电力应力对石墨烯纳米盘非易失性存储器件的总电离剂量效应的影响
2. Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices [J] . Zhang C. X., Zhang E. X., Fleetwood D. M., Nuclear Science, IEEE Transactions on . 2012,第6期

机译：电应力和总电离剂量对基于石墨烯的非易失性存储设备的影响
3. Total ionization dose and single event effects of a commercial stand-alone 4 Mb resistive random access memory (ReRAM) [J] . Bi J. S., Li B., Xi K., Microelectronics & Reliability . 2019,第Sepa期

机译：商业独立4 Mb电阻随机存取存储器（ReRAM）的总电离剂量和单事件效应
4. Total Ionizing Dose Effects in Commercial Floating-Gate-Alternative Non-Volatile Memories [C] . Matthew J. Gadlage, Matthew J. Kay, David I. Bruce, IEEE Radiation Effects Data Workshop . 2017

机译：商业浮置栅极替代非易失性记忆中的总电离剂量效应
5. Total Ionizing Dose and Dose Rate Effects on (Positive and Negative) BJT Based Bandgap References [D] . Davis, Parker 2019

机译：总电离剂量和剂量率对（正负）BJT带隙基准的影响
6. Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random-Access Memory Studied via Electrically Detected Magnetic Resonance [O] . D. J. McCrory, P. M. Lenahan, D. M. Nminibapiel, -1

机译：通过电检测磁共振研究TiN / Ti / HfO2 / TiN电阻性随机存取存储器的总电离剂量效应
7. Total Ionizing Dose Effects on Commercial ARM Microcontroller for Low Earth Orbit Satellite Subsystems [O] . Haitham Akah, Dalia Elfiky, Khaled Shahin, 2017

机译：用于低地轨道卫星子系统的商用臂微控制器的全电离剂量效应

Total Ionizing Dose Effects in Commercial Floating-Gate-Alternative Non-Volatile Memories

摘要

著录项

相似文献

相关主题

期刊订阅