Proton Radiation Effects Assessment of a Commercial 12-Megapixel CMOS Imager

摘要

Commercial off-the-shelf 12-Megapixel CMOS image sensors were irradiated with 105 MeV protons - one part to a fluence of 4×10¹¹ protons/cm², and a second part to 2×10¹¹ protons/cm². Pixel brightness increases with fluence along with annealing effects are reported. No latch-up events or hangs occurred.