机译：The 9 and 12 MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×109to 4×1010 cm-2and 1×109 to 2×1012 cm-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12 MeV protons are about 4×1010 and 2×1012 cm-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.
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