246 nm AlN-delta-GaN quantum well ultraviolet light-emitting diode

机译：246 nmAlN-δ-GaN量子阱紫外发光二极管

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摘要

The 246 nm AlN-delta-GaN quantum well ultraviolet light-emitting diode was proposed and realized experimentally, with the dominant transverse electric-polarized emission been verified by both the k·p simulation and the room-temperature polarization-dependent electroluminescence measurements.

机译：提出并通过实验实现了246 nmAlN-δ-GaN量子阱紫外发光二极管，并通过k·p模拟和室温极化相关的电致发光测量验证了主要的横向极化发射。

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《Conference on Lasers and Electro-Optics》|2017年|1-2|共2页
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Cheng Liu; Yu Kee Ooi; S M Islam; Huili Grace Xing; Debdeep Jena; Jing Zhang;
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Light emitting diodes; Aluminum gallium nitride; Wide band gap semiconductors; Optical polarization; Spontaneous emission; Molecular beam epitaxial growth; Aluminum nitride;

机译：发光二极管;氮化铝镓;宽带隙半导体;光偏振;自发发射;分子束外延生长;氮化铝;

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专利

1. 234 nm and 246 nm AIN-Delta-GaN quantum well deep ultraviolet light-emitting diodes [J] . Cheng Liu, Yu Kee Ooi, S. M. Islam, Applied Physics Letters . 2018,第1期

机译：234 nm和246 nm AIN-Delta-GaN量子阱深紫外发光二极管
2. On the enhancement of carrier injection efficiency by employing AMnN last quantum barrier in 277 nm ultraviolet light-emitting diodes [J] . Tariq Jamil, Muhammad Usman, Habibullah Jamal Journal of Applied Physics . 2021,第21期

机译：在277nm紫外发光二极管中采用AMNN最后量子屏障的提高载体注入效率
3. Performance enhancement of AlGaN-based 365 nm ultraviolet light-emitting diodes with a band-engineering last quantum barrier [J] . He Longfei, Zhao Wei, Zhang Kang, Optics Letters . 2018,第3期

机译：基于AlGan的365nm紫外发光二极管的性能提高了带工程最后的量子屏障
4. 246 nm AlN-delta-GaN quantum well ultraviolet light-emitting diode [C] . Cheng Liu, Yu Kee Ooi, S M Islam, Conference on Lasers and Electro-Optics . 2017

机译：246 NM ALN-DELTA-GAN量子孔孔紫外光二极管
5. Enhancement of Internal Quantum Efficiency and Optical Gain for Nitride Light-Emitting Diodes and Laser Diodes. [D] . Zhao, Hongping. 2011

机译：增强氮化物发光二极管和激光二极管的内部量子效率和光学增益。
6. Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures [O] . Shuxin Tan, Jicai Zhang, Takashi Egawa, 2018

机译：量子阱宽度对AlGaN深紫外发光二极管在不同温度下的电致发光性能的影响
7. The marvelous optical performance of AlGaN-based deep ultraviolet light-emitting diodes with AlInGaN-based last quantum barrier and step electron blocking layer [O] . Tariq Jamil, Muhammad Usman, Shahzeb Malik, 2021

机译：基于Algan的深紫外发光二极管的奇妙光学性能与基于内仑的最后量子屏障和步进电子阻挡层

246 nm AlN-delta-GaN quantum well ultraviolet light-emitting diode

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