Ge n-channel FinFET performance enhancement using low work function metal-interfacial layer-Ge contacts

摘要

Use of low work function metal to lower the contact resistance on unpinned MIS contacts is presented. Through TCAD simulations and experimental data, it is established that conducting interfacial layers along with low work function metals like Ytterbium instead of Titanium for MIS contacts results in lower contact resistivity as well as an improvement in ION in ultra-scaled 14 nm Germanium-on-Insulator (GOI) n-channel FinFET devices. The benefit is larger for resistance-limited scaled FinFETs at the 10 and 7 nm nodes. Mixed-mode TCAD simulation of a self-loaded inverter circuit is used to demonstrate an improvement in overall energy-delay performance.