High-performance single-phase full-bridge inverter using gallium nitride field effect transistors

摘要

This paper presents the performance of a single-phase full-bridge inverter based on wide-bandgap devices. The control strategy for the full-bridge inverter applies unipolar sinusoidal pulse width modulation. The experimental results demonstrated that a smaller figure of merit is preferred for a more efficient design; specifically, the full-bridge inverter using gallium nitride field effect transistors inside could easily reach 96% efficiency or more within a 100- to 1000-W range.