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A new acidic ILD slurry formulation for advanced CMP

机译:用于先进CMP的新型酸性ILD浆料配方

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For advanced interlayer dielectric (ILD) CMP slurry, it is highly desirable to achieve enhanced polishing efficiency and performance with reduced overall cost of ownership (CoO). A colloidal-silica based acidic ILD slurry,† was thus designed for accurate manipulation of the particle/wafer interaction by leveraging the use of proprietary additive. NMR studies were conducted to quantitatively understand particle adsorption and zeta potential of abrasives and polished films were characterized to establish the correlation of electrostatic forces to removal rate. The formulation of the slurry is optimized in such a way to reflect the maximized benefits particularly when applied together with Dow leading CMP pads.
机译:对于高级层间电介质(ILD)CMP浆料,非常希望在降低总体拥有成本(CoO)的同时提高抛光效率和性能。因此,设计了一种基于胶体二氧化硅的酸性ILD浆料,以利用专有添加剂来精确控制颗粒/晶片之间的相互作用。进行了NMR研究以定量地理解磨料的颗粒吸附和zeta电位,并对抛光的膜进行特征化以建立静电力与去除速率之间的关系。浆料的配方经过优化,以体现出最大的效益,特别是与陶氏领先的CMP垫一起使用时。

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