Theoretical study of electron transport in silicene and germanene using full-band Monte Carlo simulations

摘要

We present first-principles analytical and Monte Carlo simulations of electron transport in silicene and germanene, assuming a long-wavelength cutoff for the acoustic flexural modes (ZA) to control the divergence of the electron/ZA-phonons coupling at small wavevectors. We also consider the electron mobility in phosphorene as an example illustrating the effect of various physical models employed to handle the electron/phonon coupling. Finally, we briefly review our present understanding of electron transport in two-dimensional materials for the future CMOS technology.