Controllable Ink-Jet Printing Technique on Various Channel Width Designs toward Zinc Oxide-Based Thin Film Transistor

摘要

Ink-jet printed (IJP) thin-film transistor (TFT) electronics employing solution processed materials is considered to be the key technique to achieve mask-less, low-cost, large-area, and low temperature fabrication systems. We propose an approach for a direct printing highly transparent conducting oxide material of zinc oxide (ZnO) which the use of semiconductor layer with different transistor channel widths without any photolithography process defined. In this work, we describe the ink-jet printing ZnO TFT with three-types channel widths, and electrical characteristics with low voltage operation, high performance of switch on/off state and low temperature fabrication (200~300°C). These printed TFT thus represent an uniquely attractive path for realizing high flexibility printed electronics.