Direct growth of high-power InGaN/GaN quantum-disks-in-nanowires red light-emitting diodes on polycrystalline molybdenum substrates

摘要

The first high-power InGaN/GaN quantum-disks-in-nanowires red (λ=705 nm) light-emitting diodes on metal substrates was demonstrated. The low turn-on voltage and high power were achieved through the direct growth of high-quality nanowires on TiN/Ti/Mo stack.