An improved large signal model for AlGaN/GaN HEMTs including comprehensive thermal effect

摘要

Large signal modeling for the GaN devices are crucial for their applications. An improved large signal model for AlGaN/GaN HEMTs including comprehensive thermal effect is proposed in this work. To obtain accurate description of the thermal effect, the influence of the temperature on all the Angelov empirical model parameters like extrinsic resistance is studied. These parameters counting the thermal effects for the large signal model are modeled based on the measurement data from 0.25-μm GaN device. The comparison of the simulation and measurement results show excellent agreements under different temperature conditions.