Maskless Lithography of Nanometer-Scale Circuit Structures in Supported, Single-Layer Graphene Using Helium Ion Microscopy

摘要

Here we will discuss the utility of scanning helium ion lithography for fabricating conducting graphene structures that are supported directly by silicon oxide. The lithography is performed in a single step, dry, using high-resolution He- and Ne-ion milling directly on the supported graphene. These structures can have feature sizes ranging from multiple micrometers to less than 20 nanometers, and the graphene structures retain the ability to conduct electrons efficiently. Further we demonstrate that ion beams, due to their positive charging nature, may be used in conjunction with the graphene work function and secondary electron yield to observe the conductivity of graphene-based nanoelectronic devices in situ.