In this paper we show that devices in scaled technologies could undergo self-heating (SH) even in the off-state when subjected to stress conditions that would in turn adversely impact product life-time. We present a detailed methodology in analyzing the impact of off-state SH, thus preventing unintentional overstressing during product stress-screening. We propose an analytical model for modeling this effect, verifying it against detailed TCAD simulations and actual hardware (HW) data from 14nm SOI FinFET technology. We show that the amount of off-state SH depends on the actual device size and the circuit layout. Additional temperature rise (deltaT) can increase ¿¿¿2.7x for 2-finger vs. 40-finger FETs. We demonstrate the SH impact on off-state hot-carrier-injection (HCI) induced degradation based on HW data. Finally, we analyze its impact on backend electromigration (EM) showing that median-time-to-fail (MTTF) can be reduced as much as 80% in large multi-finger (MF) FETs when off-state SH is taken into account.
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机译：在本文中，我们证明了按比例缩放技术中的设备即使在处于关闭状态的应力条件下也可能经历自热（SH），这反过来又会对产品的使用寿命产生不利影响。我们提供了一种详细的方法来分析断态SH的影响，从而防止在产品应力筛选过程中产生意外的过大应力。我们提出了一种用于对此效应建模的分析模型，并针对详细的TCAD仿真和来自14nm SOI FinFET技术的实际硬件（HW）数据进行了验证。我们表明，截止状态SH的量取决于实际的器件尺寸和电路布局。 2指FET与40指FET相比，额外的温升（deltaT）可以提高2.7倍。我们基于HW数据证明了SH对非状态热载流子注入（HCI）诱导的降解的影响。最后，我们分析了其对后端电迁移（EM）的影响，表明在考虑了断态SH的情况下，大型多指（MF）FET的中位失效时间（MTTF）可以减少多达80％ 。
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