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Technology and device scaling considerations for CMOS imagers

机译:CMOS成像器的技术和设备缩放注意事项

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摘要

This paper presents an analysis of the impact of device and technology scaling on active pixel CMOS image sensors. Using the SLA roadmap as a guideline, we calculate the device characteristics that are germane to the image sensing performance of CMOS imagers, and highlight the areas where the CIMOS imager technology may need to depart from "standard" CMOS technologies. The impact of scaling on those analog circuit performance that pertain to image sensing performances are analyzed. Our analyses suggest that while "standard" CMOS technologies may provide adequate imaging performance at the 2-1 /spl mu/m generation without any process change, some modifications to the fabrication process and innovations of the pixel architecture are needed to enable CMOS to perform good quality imaging at the 0.5 /spl mu/m technology generation and beyond. Finally, the challenges to the CMOS imager research community are outlined.
机译:本文介绍了器件和技术缩放对有源像素CMOS图像传感器的影响。以SLA路线图为指导,我们计算出与CMOS成像器的图像传感性能密切相关的设备特性,并突出显示CIMOS成像器技术可能需要偏离“标准” CMOS技术的领域。分析了缩放对与图像感测性能有关的那些模拟电路性能的影响。我们的分析表明,尽管“标准” CMOS技术可以在2-1 / spl mu / m的生成速度下提供足够的成像性能,而无需任何工艺更改,但仍需要对制造工艺进行一些修改,并需要像素体系结构的创新才能使CMOS能够执行以0.5 / spl mu / m的技术水平及更高水平获得高质量的成像。最后,概述了CMOS成像器研究界面临的挑战。

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