Enhancement-mode single-layer CVD MoS2 FET technology for digital electronics

摘要

2D nanoelectronics based on single-layer (SL) MoS2 offers great advantages for ubiquitous electronics. With new device technology, highly uniform E-mode FETs using SL CVD MoS2 with positive VT, large mobility, excellent subthreshold swing are achieved. The integrated inverter shows excellent voltage transfer characteristic, close to rail-to-rail operation, high noise margin, large voltage gain (¿¿¿45) and small static power. The combinational and sequential digital circuits shown here serve as a toolbox of building blocks for realizing wide range of digital circuitry.