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Enhancement-mode single-layer CVD MoS2 FET technology for digital electronics

机译:用于数字电子产品的增强模式单层CVD MoS2 FET技术

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2D nanoelectronics based on single-layer (SL) MoS2 offers great advantages for ubiquitous electronics. With new device technology, highly uniform E-mode FETs using SL CVD MoS2 with positive VT, large mobility, excellent subthreshold swing are achieved. The integrated inverter shows excellent voltage transfer characteristic, close to rail-to-rail operation, high noise margin, large voltage gain (¿¿¿45) and small static power. The combinational and sequential digital circuits shown here serve as a toolbox of building blocks for realizing wide range of digital circuitry.
机译:基于单层(SL)MoS2的2D纳米电子学为无处不在的电子学提供了巨大的优势。借助新的器件技术,使用具有正VT的SL CVD MoS2实现了高度均匀的E模式FET,具有大的迁移率和出色的亚阈值摆幅。集成的逆变器具有出色的电压传输特性,接近于轨到轨运行,高噪声裕度,大电压增益(?¿¿45)和较小的静态功率。此处显示的组合和顺序数字电路用作构建模块的工具箱,用于实现广泛的数字电路。

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