机译:Mo掺杂辅助CVD合成尺寸控制,均匀分布的单层MOS2在金红石TiO2上(110)
Univ Sci &
Technol China Dept Chem Phys Hefei 230026 Anhui Peoples R China;
Univ Sci &
Technol China Dept Chem Phys Hefei 230026 Anhui Peoples R China;
Univ Sci &
Technol China Dept Chem Phys Hefei 230026 Anhui Peoples R China;
Univ Sci &
Technol China Int Ctr Quantum Design Funct Mat ICQD Hefei Natl Lab Phys Sci Microscale Hefei 230026 Anhui Peoples R China;
Univ Sci &
Technol China Int Ctr Quantum Design Funct Mat ICQD Hefei Natl Lab Phys Sci Microscale CAS Key Lab Strongly Coupled Quantum Matter Phys Hefei 230026 Anhui Peoples R China;
Univ Sci &
Technol China Dept Chem Phys Synerget Innovat Ctr Quantum Informat &
Quantum P Hefei 230026 Anhui Peoples R China;
MoS2; rutile TiO2; single crystal; heterojunction; CVD;
机译:Mo掺杂辅助CVD合成尺寸控制,均匀分布的单层MOS2在金红石TiO2上(110)
机译:H2O-EG辅助合成具有优异储锂性能的统一的Urchinlike金红石型TiO2
机译:单层MOS2的均匀和可重复的冷壁化学气相沉积合成
机译:氮掺杂金红石型TiO2(110)中氮的结构环境
机译:LEED和STM的金红石(1x1)和(1x2)TiO2(110)
机译:铁离子掺杂金红石型TiO2纳米粉的合成与表征
机译:正硅酸四乙酯在金红石型TiO2(110)上CVD生长氧化硅的实时研究