High-K gate dielectric depletion-mode and enhancement-mode GaN MOS-HEMTs for improved OFF-state leakage and DIBL for power electronics and RF applications

摘要

The characteristics of high-k gate dielectric depletion-mode and enhancement-mode GaN MOS-HEMTs is reviewed. High-k gate dielectric depletion-mode GaN MOS-HEMT with thin AlInN polarization layer of 2.5nm in the gate stack is shown to exhibit "negative" capacitance and steep SS