Study of the properties of ZnO thin films prepared by DC magnetron sputtering

摘要

ZnO thin films were prepared by reactive DC magnetron sputtering under different working pressures. ZnO thin films prepared at 40% O content in the mixed gases under the working pressure of 1.2 Pa exhibited excellent properties, such as high transmittance, high band-gap energy (3.27 eV), and good crystallinity with c-axis preferred orientation, which are benefit for the preparation of ZnO thin film transistors.