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Ex-situ training of dense memristor crossbar for neuromorphic applications

机译:神经形式应用致密留声器横杆的前训训练

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This study proposes a technique for programming a dense memristor crossbar array without isolation transistors (0T1M) in order to achieve ex-situ training of a neural network. Programming memristors to a specific resistance level requires an iterative process needing the reading of individual memristor resistances due to memristor device stochasticity. This paper presents a circuit to read individual resistances from a 0T1M crossbar and a method to map neuron synaptic weights into a novel neural circuit to enable ex-situ training. The results show that we are able to train the resistances in a 0T1M crossbar and that the 0T1M system is about 93% smaller in area than 1T1M systems.
机译:本研究提出了一种用于在没有隔离晶体管(0T1M)的不具有隔音函数横梁阵列的技术,以实现神经网络的前原位训练。对特定电阻级别的编程映射需要需要读取由于忆阻器器件随机性引起的单个忆阻电阻的迭代过程。本文介绍了从0T1M横杆读取各个电阻的电路,以及将神经元突触权重映射到新型神经电路中的方法,以实现前地训练。结果表明,我们能够在0T1M横杆中训练电阻,并且0T1M系统在1T1M系统中较小约93%。

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