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Ex-situ training of dense memristor crossbar for neuromorphic applications

机译:用于神经形态应用的致密忆阻器交叉开关的异位训练

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This study proposes a technique for programming a dense memristor crossbar array without isolation transistors (0T1M) in order to achieve ex-situ training of a neural network. Programming memristors to a specific resistance level requires an iterative process needing the reading of individual memristor resistances due to memristor device stochasticity. This paper presents a circuit to read individual resistances from a 0T1M crossbar and a method to map neuron synaptic weights into a novel neural circuit to enable ex-situ training. The results show that we are able to train the resistances in a 0T1M crossbar and that the 0T1M system is about 93% smaller in area than 1T1M systems.
机译:这项研究提出了一种无需编程隔离晶体管(0T1M)即可实现密集忆阻器交叉开关阵列编程的技术,从而实现对神经网络的非现场训练。将忆阻器编程为特定的电阻水平需要一个迭代过程,由于忆阻器器件的随机性,需要读取各个忆阻器的电阻。本文提出了一种从0T1M交叉开关读取单个电阻的电路,以及一种将神经元突触权重映射到新型神经电路中以进行异位训练的方法。结果表明,我们能够训练0T1M交叉开关中的电阻,并且0T1M系统的面积比1T1M系统小约93%。

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