Simple technique for prediction of breakdown voltage of ultrathin gate insulator under ESD testing

摘要

In this study, simple ramped voltage TLP (RV-TLP) measurement was utilized to predict breakdown voltage (BV) and number of pulses to breakdown (N) under ESD testing. The proposed prediction method does not require lengthy DC-TDDB measurements but instead utilizes quick Ramped Voltage (RV) stress measurements to calculate a voltage to breakdown (BV) in the ESD timeframe. From voltage ramping rate dependence of Q and breakdown current (J), the power law between Q and J was obtained. By using this Q-J correlation, we succeeded the predictions of BV and N analytically, and these values correspond to that for conventional constant-voltage TLP measurement. Furthermore, according to the evaluation of Q, anode-hole-injection (AHI) model is still adaptable for the breakdown under nanosecond pulse ESD testing.