High Breakdown Voltage AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with TiO_2/SiN Gate Insulator

摘要

We report the fabrication of an AlGaN/GaN high-electron-mobility transistor (HEMT) with a high breakdown voltage by employing a metal-insulator-semiconductor (MIS) gate structure using TiO_2/SiN insulators. We employed the TiO_2/SiN gate insulator for the first time in a multilayered insulator structure MIS-HEMT. The gate leakage current was significantly reduced by employing the MIS structure, and the breakdown voltage characteristics of the fabricated MIS-HEMTs were 1.1 kV with an on-resistance of 15 mΩ cm~2 for a gate-drain length of L_(gd) = 28 μm. The current collapse in the TiO_2/SiN MIS-HEMT has been improved by employing a thin SiN film under the TiO_2 insulator. AlGaN/GaN MIS-HEMTs are promising not only for high-speed applications but also for high-power switching applications.