The thermal conductivities of silicon nanowires doped with Germanium in different geometrical distributions was investigated with the nonequilibrium molecular dynamics method. Five different geometrical arrangements of the impurities that influence the thermal conductivity properties of silicon nanowires were investigated, which include centralization doping, uniform doping, non-uniform doping, random doping and cubic pattern doping. The results demonstrate that the uniformity of the impurity positions has a substantial influence on the thermal conductivity of silicon nanowires under the same impurity concentration.
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