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The temperature optimization in RF heating for a MOCVD susceptor by using numerical methods

机译:用数值方法优化MOCVD基座射频加热温度

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This analysis of numerical simulation indicates that the temperature distribution is greatly affected by the different distance between the coil and bottom susceptor as well as the coil spaces in a RF MOCVD reactor. This paper concludes that the uniformity in temperature difference with only 2.6 K. on the surface of the susceptor can be achieved by adjusting the geometry of coil arrangements. This finding can be also used for a large-size susceptor of reactor for RF MOCVD system in an optimized process.
机译:数值模拟分析表明,温度分布受线圈与底部基座之间的不同距离以及RF MOCVD反应器中线圈空间的影响。本文得出的结论是,通过调节线圈的几何形状,可以在基座表面上实现仅2.6 K.的温差均匀性。该发现还可用于优化工艺的RF MOCVD系统反应器的大型基座。

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