Ge channel MOSFETs directly on silicon

摘要

This paper presents high performance Ge/Si diode, trigate Ge PFET, junctionless trigate Ge PFET and strained Ge NFET directly on Si wafer. The leakage current of the Ge/Si diode is as low as <;10 A/cm. Trigate PFET depicts a driving current of 22 μA/μm at V = -2 V and a low OFF-current of 3 nA/μm at V = 2 V. Junctionless trigate PFET shows I/I ratio of ~6×10 (I), ~6×10 (I), and the remarkably low off-current of 450 pA/μm at V = -0.1 V. Strained trigate Ge NFET is demonstrated.