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Comprehensive device mismatch SPICE model for advanced technology nodes

机译:适用于高级技术节点的全面设备失配SPICE模型

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Device mismatch is one of the key parameters for the design of high-precision circuits since parameter variations limit circuit performance. Basically, the device mismatch is modeled by the classic Pelgrom's model in which the mismatch has L(-0.5)*W(-0.5) dependency. This model indeed satisfied industry needs for a long time. However, in practice, this may not be true especially for advanced technology nodes with more complex process steps. In literature published in recent years, one model different from the Pelgrom's model was proposed considering the short channel effect on matching degradation, and another one studied the impact of halo implantation on mismatch performance. In this paper, the mismatch compact models are first reviewed. Then, a comprehensive yet simple SPICE model is presented to cover various process effects on mismatch performance. In our model, the length and width dependency are modified with different exponent so that the mismatch is proportional to L(-nL)*W(-nW), where nL and nW are parameters to be extracted from experimental data. Examples are provided to show the capability of the new compact model.
机译:器件失配是高精度电路设计的关键参数之一,因为参数变化会限制电路性能。基本上,设备失配是由经典Pelgrom模型建模的,其中失配具有L(-0.5)* W(-0.5)依赖性。这种模式的确满足了很长一段时间的行业需求。但是,在实践中,尤其是对于具有更复杂处理步骤的高级技术节点而言,情况可能并非如此。在最近几年发表的文献中,提出了一种与Pelgrom模型不同的模型,其中考虑了短通道效应对匹配降解的影响,另一种模型研究了光晕注入对失配性能的影响。本文首先对不匹配紧凑模型进行了综述。然后,提出了一个全面而又简单的SPICE模型,以涵盖各种工艺对失配性能的影响。在我们的模型中,长度和宽度相关性以不同的指数修改,因此失配与L(-nL)* W(-nW)成比例,其中nL和nW是要从实验数据中提取的参数。提供了一些示例以显示新紧凑模型的功能。

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