Magnesium-doped Indium Oxide thin film transistors for ultraviolet detection

摘要

Thin films transistors (TFTs) with Magnesium-doped Indium Oxide (MIO) as active layer were investigated. The MIO active layer was deposited by RF-magnetron sputtering using ceramic targets with different chemical compositions. Measurement results show that the optical absorption edge of MIO film has a blue shift with increasing Mg content. The fabricated MIO TFT shows a sufficient driving current and a low and stable off-current. These results suggest that MIO TFT is a potential candidate for ultraviolet detection applications.