Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

摘要

The In2S3 thin films of tetragonal structure and In2O3 films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et)3NH]~+[In(SCOCH3)4]~-; TEA-TnTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO2) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm~2V~(-1)s~(-1) at a curing temperature of 500 °C, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.