Super steep subthreshold slope PN-body tied SOI FET's of ultra low drain voltage=0.1V with body bias below 1.0V

摘要

It was demonstrated that the body bias appearing the super steep Subthreshold Slope (SS) reduces from over 5V to below 1V on the PN-body tied SOIFET's which show the super steep SS with the ultralow drain voltage of 0.1V, when the impurity concentration of the N region on the body tied area is redesigned from the high concentration of the N+ to the low N-. The 3D device simulations also confirmed it and indicated that the optimum length of the N region exits on the different impurity concentration of it for appearing the super steep SS with the low body bias.