Scalability study of boron-based ULE implants for advanced CMOS technology

摘要

Conventional beam-line (BL) implant shows a poor scalability of profiles (x) versus energy at the ULE implant regime due to serious channeling effect and energy contamination issue. BH PLAD shows intrinsic channeling effect immunity with a totally different mechanism. An in-situ, build-in B deposition layer is formed during PLAD process as a screen amorphous layer to minimize channeling effect and reduce the surface damage residues as well. For above reasons, BH PLAD shows a good scalability of profiles (x) versus energy, and achieves better R-x characteristics and x abruptness, and then better device performance including lower series and contact resistances, better I/I ratio and less short channel effect (SCE), etc. than BL implant counterparts.