Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes

机译：微波退火Al + 注入4H-SiC p + -i-n二极管的温度相关电流-电压特性

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In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.

机译：在这项工作中，研究了微波退火的4H-SiC垂直p-i-n二极管的温度相关电流-电压特性，以识别一些会影响这些二极管的产生复合电流的陷阱。

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《International Conference on Ion Implantation Technology》|2014年|1-4|共4页
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Nath A.; Rao Mulpuri V.; Moscatelli F.; Puzzanghera M.; Mancarella F.; Nipoti R.;
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Annealing; P-i-n diodes; Temperature dependence; Temperature distribution; Temperature measurement; 4H-SiC; Arrhenius plot; ion-implantation; p-i-n diode; recombination-generation centers;

机译：退火; P-i-n二极管;温度依赖性;温度分布;温度测量; 4H-SiC; Arrhenius曲线;离子注入; p-i-n二极管;重组产生中心;

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1. Effects of Thermal Annealing on Temperature-Dependent Current-Voltage Characteristics (I-V-T) of the Au-InP/In Schottky Diodes [J] . F. E. Cimilli ?at?r International Journal of Engineering Trends and Technology . 2018,第2期

机译：热退火对Au / n-InP / In肖特基二极管的温度相关电流电压特性（I-V-T）的影响
2. Effect of rapid thermal annealing on the current-voltage characteristics of 4H-SiC Schottky diodes [J] . Ivanov P.A., Ilinskaya N.D., Potapov A.S., Semiconductors . 2013,第1期

机译：快速热退火对4H-SiC肖特基二极管电流-电压特性的影响
3. High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures >=1700 deg C [J] . R. NIPOTI, A. NATH, S.B. QADRI, Journal of Electronic Materials . 2012,第3期

机译：大剂量注入磷的4H-SiC：微波和常规注入后退火温度> = 1700摄氏度
4. Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes [C] . Nath A., Rao Mulpuri V., Moscatelli F., International Conference on Ion Implantation Technology . 2014

机译：微波退火的温度依赖电流 - 电压特性Al + 植入的4h-siC p + -i-n二极管
5. Modeling the effects of many valley electron scattering on the current-voltage characteristics of resonant tunneling diodes. [D] . Kia, Arash Kojouri. 1994

机译：模拟许多谷电子散射对谐振隧穿二极管的电流-电压特性的影响。
6. Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes [O] . Young-Jae Lee, Michael A. Schweitz, Jong-Min Oh, 2020

机译：退火气氛对Ga2O3 / 4H-SiC n-n异质结二极管特性的影响
7. Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n-Si Schottky diode [O] . Somnath Mahato, Debaleen Biswas, Luis G. Gerling, 2017

机译：au / V2O5 / n-si肖特基二极管的温度相关电流 - 电压和电容 - 电压特性分析

Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes

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