Activation of low-dose Si+ implant into In0.53Ga0.47As with Al+ and P+ co-implants

摘要

To test if Si activation could be improved through forced site selection, co-implantation of varying doses of Al and P with a fixed Si dose into InGaAs has been studied. P implants are shown to have limited effectiveness in raising overall n-type activation of Si implants while Al-co-implantation is shown to dramatically lower overall n-type activation with increasing Al dose. Implant damage from the co-implant species is thought to be one possible reason for the limited effectiveness P co-implantation has on raising the maximum electrical activation of Si implants. The results suggest that co-implantation has a dramatic, but complicated, effect on activation.