Comparison of spot and wide beam implanters for making SOI wafers by layer transfer

机译：通过层转移制造SOI晶片的点和宽束注入机的比较

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摘要

the quality of silicon-on-insulator (SOI) wafers manufactured with either spot beam implanter or wide beam implanter are compared. The comparison shows similar quality wafers and a potential advantage of wide beam implanters in throughput.

机译：比较了用点束注入机或宽束注入机制造的绝缘体上硅（SOI）晶片的质量。比较显示出质量相似的晶片，以及宽束注入机在产量方面的潜在优势。

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《International Conference on Ion Implantation Technology》|2014年|1-3|共3页
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Jost Z.; Jones A.; Lottes C.; Peidous I.; Ries M.; Usenko A.;
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Helium; Hydrogen; Implants; Silicon; Strain; Substrates; Temperature measurement; SOI; helium implantation; hydrogen ion implantation; layer transfer; spot beam; wide beam;

机译：氦;氢;放大器;硅;应变;基板;温度测量; SOI;氦注入;氢离子注入;层转移;点束;宽束;

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1. Comparison of thermally and mechanically induced Si layer transfer in hydrogen-implanted Si wafers [J] . T. Hoechbauer, A. Misra, M. Nastasi, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2004,第Feb期

机译：热和机械诱导的氢注入硅晶片中硅层转移的比较
2. Nanoscale thick layer transfer of hydrogen-implanted wafer by using polycrystalline silicon sacrificial layer [J] . T.-H. Lee, C.-H. Huang, Y. Y. Yang, Applied Physics Letters . 2007,第20期

机译：多晶硅牺牲层对注氢晶圆的纳米厚层转移
3. Comparison of ordered structure in buried oxide layers in high-dose, low-dose, and internal-thermal-oxidation separation-by-implanted-oxygen wafers [J] . Shimura T, Fukuda K, Yasutake K, Thin Solid Films . 2005,第1期

机译：高剂量，低剂量和内部热氧化法（通过注入氧晶片）中掩埋氧化物层中有序结构的比较
4. Comparison of spot and wide beam implanters for making SOI wafers by layer transfer [C] . Jost Z., Jones A., Lottes C., International Conference on Ion Implantation Technology . 2014

机译：光斑和宽梁注入机的比较通过层转印制作SOI晶片
5. Semiconductor thin film transfer by wafer bonding and advanced ion implantation layer splitting technologies. [D] . Lee, Tien-Hsi. 1998

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Comparison of spot and wide beam implanters for making SOI wafers by layer transfer

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