This article presents a sacrificial layer method of forming a nanoscale thick silicon-on-insulator thin film, avoiding the channeling effect of implantation and eliminating a subsequent thinning process. However, because of the light mass of hydrogen, it is difficult with the implantation technique to have a shallow implant depth for splitting a layer at a thickness less than 100 nm by a traditional Smart-Cut~® process. This study proves that using a polycrystalline-Si layer as a sacrificial layer in the initial implantation step can easily define a silicon transfer layer down to a thickness of tens of nanometers.
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