Strained Ge nanowire MOSFETs with a compressive strain as high as -3.9 % were fabricated by the 2-step Ge-condensation technique without intentional doping for the S/D. Record high hole mobility (μ_(eff)= 1992cm~2/Vs@N_s = 1.7×10~(12)cm~(-2)) was achieved among Ge nanowire pMOSFET ever reported. Inserting a plasma-oxide (GeO_x) inter-layer between the high-k dielectric and the strained Ge nanowire channel greatly improved not only the mobility but the cut-off characteristics. A low off-current (2.7 nA/μm at V_d = -0.5 V) was achieved by the device with the gate length of 45 nm, thanks to the reduced interface state density.
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机译：通过两步锗缩合技术制造了压缩应变高达-3.9％的应变Ge纳米线MOSFET，而无意对S / D进行掺杂。在有报道的Ge纳米线pMOSFET中，实现了创纪录的高空穴迁移率（μ_（eff）= 1992cm〜2 / Vs @ N_s = 1.7×10〜（12）cm〜（-2））。在高k电介质和应变的Ge纳米线沟道之间插入等离子氧化物（GeO_x）中间层不仅极大地改善了迁移率，而且极大地改善了截止特性。由于降低了界面态密度，栅极长度为45 nm的器件实现了低关断电流（在V_d = -0.5 V时为2.7 nA /μm）。
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