Fermi level modulation at the interface of graphene and metal

摘要

The Fermi level of graphene in contact with the metal contact is a critically important factor for graphene-based device design. Fermi level pinning like behavior at the metal on a graphene can limit the contact resistance reduction and other device operations, especially in high workfunction metal cases. We report that this problem can be substantially alleviated by the hydrogen anneal at high pressure over 20atm.