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Directions in future of SRAM with QDR-WideIO for high performance networking applications and beyond

机译:带有QDR-WideIO的SRAM在高性能网络应用及其他方面的未来发展方向

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In this paper we describe the high performance synchronous QDR-WideIO SRAM KGD from Cypress that is architected with fast and wide interface with optimized memory sub-system for future high performance networking and computing applications. Systems for next generation networking switches rely on high rate router line cards of 200 to 400 Gbps. QDR-WideIO fabricated on 28nm HKMG technology builds upon High Bandwidth Memory (HBM) interface standard while using 2.5D/3D stacking to form a System in Package (SiP) networking system solutions. We explain that both SRAM and DRAM are necessary and can co-exist in these systems and why it does not make sense to integrate the SRAM inside the logic ASIC. We also describe the memory design and partitioning that allows for delivering requisite Random Transaction Rate (RTR) representing random accesses to the memory per second of approaching 24000 MT/s (>10X improvement over our previous generation of QDR-IV synchronous SRAM) and total bandwidth of greater than 1.5 Tbps in a power efficient way. QDR-WideIO achieves latency of 13 cycles for read and 8 cycles for write with density of 288Mb with core operating at 1500 MHz. Finally we describe a path forward toward future of in-package integrated products.
机译:在本文中,我们描述了赛普拉斯的高性能同步QDR-WideIO SRAM KGD,该器件具有快速和宽接口以及优化的存储子系统,可用于未来的高性能网络和计算应用。下一代网络交换机的系统依赖于200到400 Gbps的高速率路由器线卡。采用28nm HKMG技术制造的QDR-WideIO建立在高带宽存储器(HBM)接口标准的基础上,同时使用2.5D / 3D堆叠来形成系统级封装(SiP)网络系统解决方案。我们解释说SRAM和DRAM都是必要的,并且可以在这些系统中共存,为什么将SRAM集成到逻辑ASIC中也没有意义。我们还描述了内存设计和分区,该内存和分区允许交付必需的随机事务速率(RTR),代表每秒对内存的随机访问,接近24000 MT / s(与我们上一代QDR-IV同步SRAM相比提高了10倍)以省电的方式提供大于1.5 Tbps的带宽。 QDR-WideIO的密度为288Mb,内核工作在1500 MHz,实现了13个读延迟和8个写延迟。最后,我们描述了通往包装内集成产品未来的道路。

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