Non-Monte-Carlo methodology for high-sigma simulations of circuits under workload-dependent BTI degradation#x2014;Application to 6T SRAM

摘要

Recent advances in understanding Bias Temperature Instability (BTI) in terms of individual gate oxide defects has created a paradigm shift towards describing degradation in terms of time-dependent variability. This added time dimension to the variability analysis has proven to be a considerable design challenge. Moreover, the non-normally distributed ΔVTH shifts create compatibility issues with the current SotA statistical assessments techniques for evaluating high sigma yield of SRAM cells. Here we present a novel Non-Monte-Carlo numerical simulation methodology capable of evaluating circuit performance under workload-dependent BTI degradation.