SER/SEL performances of SRAMs in UTBB FDSOI28 and comparisons with PDSOI and BULK counterparts

机译：UTBB FDSOI28中SRAM的SER / SEL性能以及与PDSOI和BULK同类产品的比较

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This work presents alpha and neutron SER characterizations of a 28nm commercial Fully-Depleted SOI technology predisposed to consumer applications. Its intrinsic SER hardness is as well compared to known highly reliable Partially-Depleted SOI technologies.

机译：这项工作展示了倾向于消费类应用的28nm商业全耗尽SOI技术的α和中子SER表征。与已知的高度可靠的部分耗尽SOI技术相比，其固有的SER硬度也是如此。

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《International Reliability Physics Symposium》|2014年|1-5|共5页
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Gasiot Gilles; Soussan Dimitri; Glorieux Maximilien; Bottoni Cyril; Roche Philippe;
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关键词
Fully Depleted SOI; SER; Soft Error Rate; UTBB;

机译：SOI完全耗尽; SER;软错误率; UTBB;

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1. Parameterization of neutron-induced SER in bulk SRAMs from reverse Monte Carlo Simulations [J] . Wrobel F., Iacconi P. IEEE Transactions on Nuclear Science . 2005,第6期

机译：反向蒙特卡洛模拟中大块SRAM中中子感应SER的参数化
2. Single Event Upset Sensitivity of D-Flip Flop: Comparison of PDSOI With Bulk Si at 130 nm Technology Node [J] . Leqing Zhang, Jialing Xu, Shuang Fan, IEEE Transactions on Nuclear Science . 2017,第1期

机译：D触发器的单事件翻转灵敏度：PDSOI与130 nm技术节点的块状Si的比较
3. Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node [J] . Roche P., Gasiot G., Forbes K., IEEE Transactions on Nuclear Science . 2003,第6期

机译：低于130nm技术节点的商用SOI和批量SRAM的软错误率比较
4. SER/SEL performances of SRAMs in UTBB FDSOI28 and comparisons with PDSOI and BULK counterparts [C] . Gasiot Gilles, Soussan Dimitri, Glorieux Maximilien, International Reliability Physics Symposium . 2014

机译：UTBB FDSOI28中SRAM的SER / SEL性能和PDSOI和散装对应物的比较
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SER/SEL performances of SRAMs in UTBB FDSOI28 and comparisons with PDSOI and BULK counterparts

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