Micromachined sub-THz interconnect channels for planar silicon processes

摘要

This paper presents design, fabrication and measurement results of sub-THz silicon dielectric waveguide channels for interconnect applications. To the authors' knowledge, this is the first demonstration of a sub-THz interconnect channel for planar silicon processes. The measured insertion loss peaks at −15.9 dB. The measurement results verify that the insertion loss is improved more than 35 dB compared to the scenario without channels.