Photoresist Shrinkage Effects in 16 nm Node Extreme Ultraviolet (EUV) Photoresist Targets

摘要

Photoresist shrinkage (i.e., line slimming) is an important systematic uncertainty source in critical dimension-scanning electron microscope (CD-SEM) metrology of lithographic features . It influences both the precision and the accuracy of CD-SEM measurements, while locally damaging the sample. Minimization or elimination of shrinkage is desirable, yet elusive. This error source will be a factor in CD-SEM metrology on polymer materials in EUV lithography. Recent work has demonstrated improved understanding of the trends in the shrinkage response depending on electron beam and target parameters in static measurements . Some research has highlighted a second mode of shrinkage that is apparent over time and progresses as a function of time between consecutive measurements, a form of "dynamic shrinkage" that appears to be activated by electron beam, in which the activated feature perpetually and logarithmically shrinks . Another work has demonstrated that as pitches continue to get smaller with resulting reductions in spaces between lines, charging may emerge as an additional, competing, unpredictable error source for CD-SEM metrology on dense photoresist features, an issue that is predicted to become more common as these spaces become more confined . In this work, we explore the static shrinkage behaviors of various EUV photoresists into the 16 nm half-pitch node, with samples generated using the advanced EUV lithography capable of generating such tight pitches . Dynamic shrinkage behavior was explored on these materials last year . The static shrinkage behaviors will be validated to show compliance with the SEMATECH shrinkage model on small EUV resist features. Using the results of the model fits, a simulation study will predict the shrinkage trends at future nodes. Further studies will confirm whether or not charging phenomena are observable, and the beginning of a charging simulation study will be discussed.