Design and performance of AlGaAsSb/InGaAsSb/GaSb type-I quantum well diode lasers

摘要

This paper presents the design and performance of antimonide-based, type-I, quantum-well diode lasers. Using 1.5-% compressively strained InGaAsSb quantum wells, the quaternary's miscibility gap was avoided to produce room-temperature devices emitting at 2.5 and 2.8 μm. The 2.5-μm devices output 1 W continuous wave and nearly 5 W in pulsed operation. Modal gain measurements show internal losses less than 4 cm~(-1). This design should produce room-temperature diode lasers with wavelengths greater than 3 μm.