InGaAs MOSFETs for CMOS: Recent advances in process technology

摘要

InGaAs has recently emerged as the most attractive non-Si n-channel material for future nano-scale CMOS. InGaAs n-channel MOSFETs promise to advance Moore's Law by allowing continued scaling through a reduction in footprint and operating voltage without compromising performance. This paper reviews recent advances in some of the key enabling process technology of InGaAs MOSFETs. It also outlines some of the challenges that need to be overcome before this new device family can become a reality.