High voltage N-channel MOSFET in CMOS-type technology and relating manufacturing process

摘要

The present invention relates to a high-voltage N-channel MOS transistor manufactured with twin-well CMOS-type technology on a portion (6) of a semiconductor substrate (2) having a first type of conductivity.;This transistor comprises a source region (20,25) and drain region (20,25) having a second type of conductivity located respectively at the sides of a gate channel region (18).