The characteristics of wet gate oxide device and nitride oxide (NO) device

摘要

In this paper we fabricated and tested the 0.26μm NMOSFET with wet gate oxide and nitride oxide gate to compare that the characteristics of hot carrier effect, charge to breakdown, transistor Id-Vg curve, charge trapping, and SILC(Stress InducedLeakage Current) using the HP4145 device tester As a result we find that the characteristics of nitride oxide gate device better than wet gate oxide device, especially hot carrier lifetime (nitride oxide gate device satisfied 30years, but the lifetime ofwet gate oxide was only 0.1year), variation of Vg, charge to breakdown and charge trapping etc.